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ST 13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol hFE hFE ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT tf ts
Value 500 400 9 0.3 0.75 150 - 55 to + 150 Min. 5 10 500 400 9 8 Max. 40 100 200 100 0.5 1.2 0.3 1.5
Unit V V V A W
O
C C Unit A A A V V V V V MHz s s
O
Characteristics at Ta = 25 C
O
Parameter DC Current Gain at VCE = 10 V, IC = 0.25 mA at VCE = 20 V, IC = 20 mA Collector Base Cutoff Current at VCB = 500 V Collector Emitter Cutoff Current at VCE = 400 V Emitter Base Cutoff Current at VEB = 9 V Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz Fall Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V Storage Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 29/08/2008
ST 13001
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 29/08/2008

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